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kw.\*:("Semiconductor-semiconductor thin film structures")

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Application of semiconductor micro- and nanotubes in biologyPRINZ, Alexander V; PRINZ, Victor Ya.Surface science. 2003, Vol 532-35, pp 911-915, issn 0039-6028, 5 p.Conference Paper

Full field chemical imaging of buried native sub-oxide layers on doped silicon patternsDE LA PENA, F; BARRETT, N; ZAGONEL, L. F et al.Surface science. 2010, Vol 604, Num 19-20, pp 1628-1636, issn 0039-6028, 9 p.Article

Combined effects of substrate compliance and film compositional grading on strain relaxation in layer-by-layer semiconductor heteroepitaxy: the case of InAs/In0.50Ga0.50As/GaAs(111)AZEPEDA-RUIZ, Luis A; WEINBERG, W. Henry; MAROUDAS, Dimitrios et al.Surface science. 2003, Vol 540, Num 2-3, pp 363-378, issn 0039-6028, 16 p.Article

Epitaxial growth of organic heterostructures : Morphology, structure, and growth modeSASSELLA, A; CAMPIONE, M; RAIMONDO, L et al.Surface science. 2007, Vol 601, Num 13, pp 2571-2575, issn 0039-6028, 5 p.Conference Paper

Electrochemical preparation of lead-doped amorphous Se films and underpotential deposition of lead onto these filmsIVANOV, Dmitry K; OSIPOVICH, Nikolay P; POZNYAK, Sergey K et al.Surface science. 2003, Vol 532-35, pp 1092-1097, issn 0039-6028, 6 p.Conference Paper

Surface modification of GaAs during argon ionic cleaning and nitridation: EELS, EPES and XPS studiesBIDEUX, L; BACA, D; GRUZZA, B et al.Surface science. 2004, Vol 566-68, pp 1158-1162, issn 0039-6028, 5 p., 2Conference Paper

Mechanism and energetics of dimerization of SiH2 radicals on H-terminated Si(001)-(2 x 1) surfacesSRIRAMAN, Saravanapriyan; MAHALINGAM, Pushpa; AYDIL, Eray S et al.Surface science. 2003, Vol 540, Num 2-3, pp L623-L630, issn 0039-6028Article

XPS study of the formation of ultrathin GaN film on GaAs(1 0 0)BIDEUX, L; MONIER, G; MATOLIN, V et al.Applied surface science. 2008, Vol 254, Num 13, pp 4150-4153, issn 0169-4332, 4 p.Article

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